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C2026 Inchange Semiconductor - NPN Transistor - 2SC2026

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MH- ·High Power Gain Gpe= 15dB TYP. @ f= 500MH- ·High Gain Bandwidth Product fT= 2.0GH- TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

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C2001 NPN Transistor - 2SC2001 - Micro Commercial Components

MCC Features omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2001 Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsu

C2002 NPN Transistor - 2SC2002 - NEC

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