Semiconductor Informations
| C2120 JIANGSU CHANGJIANG - NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES - High DC Current Gain - Complementary to 2SA950 TO 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu |
| C2120 Toshiba Semiconductor - Silicon NPN Epitaxial Type Transistor 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction te |
| C2120 NPN Transistor - JIANGSU CHANGJIANG JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES - High DC Current Gain - Complementary to 2SA950 TO 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA T |
| C2120 Silicon NPN Epitaxial Type Transistor - Toshiba Semiconductor 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter |