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MCC255-16IO1
Silicon Controlled Rectifier, 450A I(T)RMS, 250mA I(T), 1600V V(DRM), 1600V V(RRM), 2 Element
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File Download: C2551.PDF
[ Descriptions ]
| C2551 Toshiba - NPN Transistor - 2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 2SC2551 Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Industrial Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complemen |
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| C2500 NPN Transistor - 2SC2500 - Toshiba 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 |
| C2539 NPN Transistor - 2SC2539 - Mitsubishi Electric Semiconductor |
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