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[ Descriptions ]


C2655 ETC - NPN Transistor - 2SC2655

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) NPN SILICON TRANSISTOR 1 TO-92NL *Pb-free plating product number: 2SC2655L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K
C2655 Toshiba - NPN Transistor - 2SC2655

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Maximum Ratings (Ta = 25°C) Characteristics Coll


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C2610 NPN Transistor - 2SC2610 - Renesas

2SC2610 Silicon NPN Triple Diffused Application High voltage amplifier TV Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base
C2611 NPN Transistor - 2SC2611 - Hitachi Semiconductor

2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collect




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