Semiconductor Informations
| C2878 Toshiba Semiconductor - NPN Transistor - 2SC2878 2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 Unit: mm For Muting and Switching Applications High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base volt |
| C2800 NPN Transistor - 2SC2800 - Mitsubishi Electric |
| C2810 NPN Transistor - 2SC2810 - SavantIC SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 ·Wit DESCRIPTION With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum r |