Semiconductor Informations

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| C3631 NEC - NPN Transistor - 2SC3631 Silicon Power Transistors 2SC3631,3631-Z NPN VCEO 400 V tf 0.7 μs TA = 25°C VCBO VCEO VEBO 全損失 2 IC(DC) 1 IC(pulse) PT ジャンクション 度 Tj 保存 度 Tstg 1. PW 10 ms, Duty Cycle 50 2. TC = 25°C 500 400 7 2.0 4.0 10 150 -55~+150 V V V A A W °C °C 1.6 ±0.2 6.5 ±0.2 5.0 ±0.2 4 123 1.1 ±0.2 1.5 +0.2 0.1 mm 2.3 ±0.2 0.5 ±0.1 7.0 MIN. 5.5 ±0.2 13.7 |
| C3607 NPN Transistor - 2SC3607 - Toshiba TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector- |
| C3611 NPN Transistor - 2SC3611 - Panasonic Semiconductor Power Transistors 2SC3611 Silicon NPN epitaxial planar type Unit: mm For video amplifier φ 3.16±0.1 8.0+0.5 0.1 3.2±0.2 I Absolute Maximum Ratings TC = 25°C 0.75±0.1 Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCER VCEO VEBO ICP IC PC Tj Tstg Rating 110 |