Semiconductor Informations

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| C4D08120E Cree - Silicon Carbide Schottky Diode C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec Rectifier Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2 Benefits Re |
| C4D08120E Silicon Carbide Schottky Diode - Cree C4D08120E ® Silicon Carbide Schottky Diode VRRM = IF (TC=135˚C) Qc = 1200 V = 12 A 37 nC Z-Rec Rectifier Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast S |