Semiconductor Informations
| C5022 Hitachi Semiconductor - NPN Transistor - 2SC5022 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction t |
| C5000 NPN Transistor - 2SC5000 - Toshiba Semiconductor TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications 2SC5000 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emit |
| C5001 Low Skew Muliple Frequency PCI Clock Generator with EMI Reducing SSCG - International C5001 Low Skew Multiple Frequency PCI Clock Generator with EMI Reducing SSCG. Approved Product Product Features S S S S S S S S S S S S Produces PCI output clocks that are individually 2 selectable for 33.3 or 66.6 MH- under I C or strapping control. Separate output buffer power supply for reduced |