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| C5177 NEC - NPN Transistor - 2SC5177 DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GH- |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 0.15 +0.1 Mini-Mold package EIAJ: SC-59 |
Related Information
| C5100 Silicon NPN Triple Diffused Planar Transistor - Sanken electric 2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5100 10max |
| C5101 NPN Transistor - 2SC5101 - Sanken electric 2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5101 10ma |
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