Semiconductor Informations
| C5242 Toshiba Semiconductor - NPN Transistor - 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm High Collector breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltag |
| C5200 NPN Transistor - 2SC5200 - Toshiba 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Col |
| C5201 NPN Transistor - 2SC5201 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra |
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