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Search C5242 Datasheet (PDF)
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2SC5242OTU
Bipolar (BJT) Single Transistor, NPN, 250 V, 17 A, 130 W, TO-3P, Through Hole
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 451 | 6 | Visit Site | ||
| Arrow Electronics | 1 | 4.769 | Visit Site | ||
| Component Stockers USA | 6,416 | 2.22 | Visit Site | ||
| Win Source | 200 | Visit Site | |||
| Worldway Electronics | 23,880 | Visit Site | |||
| Fmall Co., Limited | 11,330 | 3.1471 | Visit Site | ||
| SHENGYU ELECTRONICS | 12,902 | 5.6324 | Visit Site | ||
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[ Descriptions ]
| C5242 Toshiba Semiconductor - NPN Transistor - 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm High Collector breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltag |
Related Information
| C5200 NPN Transistor - 2SC5200 - Toshiba 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Col |
| C5201 NPN Transistor - 2SC5201 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra |
Related Part Number
C5248 | C5763 |C5149 | C5888 |
C5802 | C5426 |