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CY8C5287AXI-LP095
MCU 32-bit ARM Cortex M3 RISC 256KB Flash 1.8V/2.5V/3.3V/5V 100-Pin TQFP Tray
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 2,220 | Visit Site | |||
| Newark | 5,226 | 12.93 | Visit Site | ||
| Rochester Electronics | 210 | Visit Site | |||
| Arrow Electronics | 400 | 11.4804 | Visit Site | ||
| Mouser | 10,884 | 14.44 | Visit Site | ||
| DigiKey | 465 | 15.21 | Visit Site | ||
| Microchip USA | 133 | Visit Site | |||
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[ Descriptions ]
| C5287 Sanken electric - NPN Transistor - 2SC5287 2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5287 900 550 7 5(Pulse10) 2.5 80(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC5287 100max 100max 550min 10 to 25 0.5max 1.2max 6typ 50typ V MH- pF 5.45±0.1 |
Related Information
| C5200 NPN Transistor - 2SC5200 - Toshiba 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Col |
| C5201 NPN Transistor - 2SC5201 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra |
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