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TE Connectivity / Raychem
C52966-000
Connector Accessories Tinel Lock Adapter ST Aluminum Alloy Bright Electroless Nickel Entry Size 7
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| C5296 Sanyo Semicon Device - NPN Transistor, TO-3PML - 2SC5296 w w w . D a t a S h e e t . c o . k r Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Packag |
| C5296 Inchange Semiconductor - Silicon NPN Power Transistor Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION ¡¤ With TO-3PML package ¡¤ High breakdown voltage, high reliability. ¡¤ High speed ¡¤ Built in damper diode APPLICATIONS ¡¤ Ultrahigh-definition CRT display ¡¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION ¡¤ Absolute maximum ratings(Ta=25¡æ |
Related Information
| C5200 NPN Transistor - 2SC5200 - Toshiba 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Col |
| C5201 NPN Transistor - 2SC5201 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra |
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