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TE Connectivity / Raychem
C52991-000
Circular MIL Spec Strain Reliefs & Adapters TX18AB90-2210
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| C5299 Sanyo Semiconductor Corporation - NPN Transistor - 2SC5299 Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2. |
| C5299 Sanyo Semiconductor Corporation - NPN Transistor - 2SC5299 Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2. |
Related Information
| C5200 NPN Transistor - 2SC5200 - Toshiba 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Col |
| C5201 NPN Transistor - 2SC5201 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm High breakdown voltage: VCEO = 600 V Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra |
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