Semiconductor Informations
C5353 Toshiba - NPN Transistor - 2SC5353 2SC5353 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5353 Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max) High collectors breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-e |
C5300 VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS - Vectron International C5300 Typical Applications Base Stations Test Equipment Telecom & Wireless Infrastructure Digital Switching VCXO Features 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS, TTL and LVPECL Previous Corning Model Numbers Frequency range MC044, MC344, MC046, MC346, MC04 |
C5300 NPN Transistor - 2SC5300 - Sanyo Ordering number:EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MB |
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