Semiconductor Informations
Search C5706 Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 1,400 | Visit Site | |||
| Newark | 240 | 2.29 | Visit Site | ||
| Rochester Electronics | 700 | Visit Site | |||
| Verical | 700 | Visit Site | |||
| Flip Electronics | 1,400 | Visit Site | |||
| Mouser | 1,025 | 2.08 | Visit Site | ||
| DigiKey | 1,631 | 2.08 | Visit Site | ||
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[ Descriptions ]
| C5706 Sanyo Semiconductor - NPN Transistor - 2SC5706 Ordering number : ENN6912 2SA2039 , 2SC5706 PNP , NPN Epitaxial Planar Silicon Transistors 2SA2039 , 2SC5706 High Current Switching Applications Features Package Dimensions unit : mm 2045B [2SA2039 , 2SC5706] 6.5 5.0 4 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter satu |
Related Information
| C5702 NPN Transistor - 2SC5702 - Renesas To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
| C5703 NPN Transistor - 2SC5703 - Toshiba Semiconductor 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (m |
Related Part Number
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C5802 | C5426 |