Semiconductor Informations
| C5966 Sanyo Semicon Device - NPN Transistor - 2SC5966 Ordering number : ENN7653 2SC5966 NPN Triple Diffused Planar Silicon Transistor 2SC5966 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions unit : mm 2174A [2SC5966] 16.0 5.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20. |
| C5902 NPN Transistor - 2SC5902 - Panasonic Semiconductor Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ - Features High breakdown voltage: VCBO ≥ 1 700 V Wide safe operation area Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4 |
| C5904 NPN Transistor - 2SC5904 - Panasonic Semiconductor Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) - Features High breakdown voltage (VCBO ≥ 1 700 V) High-speed switching (tf < 200 nsec) Wide safe operation area 26.5±0.5 3. |