Semiconductor Informations
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| C6000 Toshiba Semiconductor - NPN Transistor - 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collecto |
Related Information
| C6000 NPN Transistor - 2SC6000 - Toshiba Semiconductor TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute M |
| C6017 NPN Transistor - 2SC6017 - Sanyo Semicon Device Ordering number : ENN8275 2SA2169 , 2SC6017 PNP , NPN Epitaxial Planar Silicon Transistors 2SA2169 , 2SC6017 Applications High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-e |