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CLF1G0035-100PU
RF Power Transistor, DC- 3.5 GHz, 100 W, 12.8 dB, 50 V GaN

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CLF1G0035-100 NXP Semiconductors - Broadband RF power GaN HEMT

CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at


Related Information

CLF1G0035-100 Broadband RF power GaN HEMT - NXP Semiconductors

CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operatio



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