Semiconductor Informations
| CS20N60AND TGW - Silicon N-Channel Power MOSFET Huajing Discrete Devices Silicon General Description： CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), |
| CS20N60A8H Huajing Microelectronics - Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system |
| CS20-12io1 Thyristor - IXYS Thyristor Single Thyristor Part number CS20-12io1 CS20-12io1 VRRM = 1200 V I TAV = 20 A VT = 1,23 V 21 3 Backside: anode Features , Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Line rectifying 50, 60 H- ● Softstart AC |
| CS20-14io1 Thyristor - IXYS Thyristor Single Thyristor Part number CS20-14io1 CS20-14io1 VRRM = 1400 V I TAV = 20 A VT = 1,23 V 21 3 Backside: anode Features , Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Line rectifying 50, 60 H- ● Softstart AC |