Semiconductor Informations
| CS20N60A8H Huajing Microelectronics - Silicon N-Channel Power MOSFET Silicon N-Channel Power MOSFET CS20N60 A8H ○R General Description： CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system |
| CS20-12io1 Thyristor - IXYS Thyristor Single Thyristor Part number CS20-12io1 CS20-12io1 VRRM = 1200 V I TAV = 20 A VT = 1,23 V 21 3 Backside: anode Features , Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Line rectifying 50, 60 H- ● Softstart AC |
| CS20-14io1 Thyristor - IXYS Thyristor Single Thyristor Part number CS20-14io1 CS20-14io1 VRRM = 1400 V I TAV = 20 A VT = 1,23 V 21 3 Backside: anode Features , Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Line rectifying 50, 60 H- ● Softstart AC |