Semiconductor Informations
| D1266A Panasonic Semiconductor - NPN Transistor - 2SD1266A Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Unit: mm 0.7±0.1 - Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 - Absolute |
| D1207 METAL GATE RF SILICON FET - Seme LAB TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W 12.5V 500MH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss 5 4 H I F M K J N DT PIN 1 PI |
| D1207 NPN Transistor - 2SD1207 - Sanyo Semiconductor Ordering number:930C PNP, NPN Epitaxial Planar Silicon Darlington Transistors 2SB892, 2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Package Dimensions unit:mm 2006A [2SB892, 2SD1207] Features · FBET and MBIT process |