Semiconductor Informations
| D1303 FGX - NPN Transistors NPN Transistors -- APPLICATION:Audio Muting Applications. D1303 NPN Silicon -- MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation VCBO VCEO VEBO Ic Ib Pc 25 V 20 V 12 V 0.3 A 0.03 A 0.4 W Junction Temperature Storage Temperature Range Tj 150 ℃ Tstg |
| D1303 SEMTECH - NPN Silicon Epitaxial Planar Transistor ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA) ˙ Low on resistance Ron=0.6Ω (Typ.) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings |
| D13001S Low-frequency amplification environment rated bipolar transistors - ETC R Æ· ´ ¾³¶ ¨ ¼Ð§ ¹ D13001S ² Æ· ØÐ ¡ ¡ ¸ß ¹ ¸ß ÷ ¿ ¡ ¡ ¡ ¸ß¿ª¹Ø ¶ ¸ß¿ Ð ·± ¨ RoHS ² Æ· ÷ ª ¾ ¡ ¡ ¡ ¡ ¡ ½ Æ × ÷Æ ¸ßÆ ¿ª¹Ø ´ ¸ßÆ ¹ ± ° ¹ · ´ ¸ 3DD13001S ² ÷ ª¹¤ |
| D13001S Low-frequency amplification environment rated bipolar transistors - ETC R Æ· ´ ¾³¶ ¨ ¼Ð§ ¹ D13001S ² Æ· ØÐ ¡ ¡ ¸ß ¹ ¸ß ÷ ¿ ¡ ¡ ¡ ¸ß¿ª¹Ø ¶ ¸ß¿ Ð ·± ¨ RoHS ² Æ· ÷ ª ¾ ¡ ¡ ¡ ¡ ¡ ½ Æ × ÷Æ ¸ßÆ ¿ª¹Ø ´ ¸ßÆ ¹ ± ° ¹ · ´ ¸ 3DD13001S ² ÷ ª¹¤ |