Semiconductor Informations
File Download: D2012.PDF
| D2012UK Seme LAB - METAL GATE RF SILICON FET TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 |
| D2012 Wuxi Youda Electronics - Si NPN Transistor YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Diss |
| D200 SIP DC/DC Converters - uPD D200 Series Single & Dual Output Miniature, 2W SIP DC, DC Converters Electrical Speci cations Speci cations typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Speci cations subject to change without notice. Input Key Features: Parameter Conditions Min. Ty |
| D2001UK METAL GATE RF SILICON FET - Seme LAB TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS |
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