Semiconductor Informations
| D2058 Fairchild Semiconductor - 60V, 3A, NPN Transistor, KSD2058, 2SD2058 KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) |
| D2058 Savant - 3A, 60V, Silicon NPN Power Transistor, 2SD2058 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and |
| D200 SIP DC/DC Converters - uPD D200 Series Single & Dual Output Miniature, 2W SIP DC, DC Converters Electrical Speci cations Speci cations typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Speci cations subject to change without notice. Input Key Features: Parameter Conditions Min. Ty |
| D2001UK METAL GATE RF SILICON FET - Seme LAB TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS |
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