Semiconductor Informations

File Download: D2061.PDF
| D2061 Jiangsu Changjiang Electronics - NPN Transistor - 2SD2061 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES - Low saturation voltage - Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
| D200 SIP DC/DC Converters - uPD D200 Series Single & Dual Output Miniature, 2W SIP DC, DC Converters Electrical Speci cations Speci cations typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Speci cations subject to change without notice. Input Key Features: Parameter Conditions Min. Ty |
| D2001UK METAL GATE RF SILICON FET - Seme LAB TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS |