Semiconductor Informations
| D2102 Hitachi Semiconductor - NPN Transistor - 2SD2102 2SD2102 Transient Thermal Resistance Thermal resistance θj-c (°C, W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) |
| D2102 NPN Transistor - 2SD2102 - Hitachi Semiconductor 2SD2102 Transient Thermal Resistance Thermal resistance θj-c (°C, W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) |
| D2131 NPN Transistor - 2SD2131 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zene |
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