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| D2131 Toshiba - NPN Transistor - 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zener diode included between collector and base. Unclamped inductive load energy: E = 150 mJ (min) Abs |
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| D2131 NPN Transistor - 2SD2131 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zene |
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