Semiconductor Informations
| D2144 ROHM Semiconductor - NPN Transistor - 2SD2144 Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K , 2SD2144S FFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC , IB = 500mA , 20mA) FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-232-C107) 232 Transistors FAbsolute maximum r |
| D2102 NPN Transistor - 2SD2102 - Hitachi Semiconductor 2SD2102 Transient Thermal Resistance Thermal resistance θj-c (°C, W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 10m 100m 1.0 10 100 1000 Time t (s) |
| D2131 NPN Transistor - 2SD2131 - Toshiba TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2131 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) Zene |