Semiconductor Informations
D2627 Sanyo Semicon Device - NPN Triple Diffused Planar Silicon Transistor Ordering number : ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features Package Dimensions unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3 |
D2603 SILICON NPN TRANSISTOR - FOSHAN BLUE ROCKET 2SD2603(3DD2603) 硅 NPN 半 三 管, SILICON NPN TRANSISTOR 用途:用于一般功率 出放大。 Purpose: Power out amplifier applications. 特点: 穿 高, 和 降低。 Features: High VCEO,low V .CE(sat) 限 , Absolute maximum ratings(Ta=25℃) 符 位 Symbol Rating Unit |
D2604 NPN Transistor - 2SD2604 - Toshiba Semiconductor 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Absolute Maximum Ratings (Tc = 25° |
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