Semiconductor Informations

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| D600 Sanyo Semicon Device - NPN Transistor - 2SD600 Ordering number:346G PNP, NPN Epitaxial Planar Silicon Transistor 2SB631,631K, 2SD600,600K 100V, 120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K, 2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : T |
| D600 NPN Transistor - 2SD600 - Sanyo Semicon Device Ordering number:346G PNP, NPN Epitaxial Planar Silicon Transistor 2SB631,631K, 2SD600,600K 100V, 120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100, 120V, High current 1A. · Low saturation voltage, excellent h FE linearity. Package Dimensions unit:mm |