Semiconductor Informations
D882 ETC - TO-126 Plastic-Encapsulate Transistors w w w .D at aS he et 4U .c om |
D882P Wuxi Youda Electronics - Si NPN Transistor YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 40V *Collector current up to 3A *High hFE linearity D882 D882 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissip |
D880 NPN EPITAXIAL TRANSISTOR - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB |
D880 Silicon NPN Power Transistors - SavantIC SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD880 DESCRIPTION www.dat·aWshiethet4Tu.Oco-m220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN 1 2 3 |