Semiconductor Informations

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| D965 Jiangsu Changjiang Electronics - TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors D965 FEATURES TRANSISTOR ¨NPN TO¡ª 92 1.EMITTER Power dissipation PCM : 0.75 W ¨ Tamb=25¡æ Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS ¨ Tamb=25¡æ Parameter Col |
| D965 Stanson Technology - NPN TRANSISTOR NPN TRANSISTOR 5.0A D965 AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA ELECTRONIC FALSH UNIT HIGH PERFORMANCE AT LOW SUPPLY VLOTAGE LOW VCE(SAT) TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage BVebo Collector-Base Leakage Icbo Emitter-Base Leakage Iebo |
| D965 NPN General Purpose Transistor - SeCoS Elektronische Bauelemente D965 NPN General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Audio amplifier Flash unit of camera Switching circuit CLASSIFICATION OF hFE(2) Rank R Range 340 - 600 T 560 - 950 V 900 - 2000 TO-92 GH J |
| D965 NPN Transistor - WEJ RoHS D965 D965 TRANSISTOR (NPN) TO-92 TDFEATURES .,LPower dissipation PCM: 0.75 W (Tamb=25℃) OCollector current ICM: 5 A CCollector-base voltage V(BR)CBO: 42 V Operating and storage junction temperature range ICTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 123 NELECTRI |