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[ Descriptions ]

DFF2N60 DnI - 2.4A, 600V, N-Channel MOSFET

DFF2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv, dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A 3. Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-li



Related Information

DFF2N60 2.4A, 600V, N-Channel MOSFET - DnI

DFF2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv, dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A 3. Source General Description This N-channel enhancement mode field-effect pow



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