Semiconductor Informations
DFP50N06 N-Channel MOSFET - DnI DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv, dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.022 ohm ID = 50A General Description This N-channel enhancement mode field-effect power tr |