Semiconductor Informations

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| F9540N International Rectifier - IRF9540N PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi |
| F9530N IRF9530N - International Rectifier www.t.in PD - 91482C IRF9530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International |
| F9540N IRF9540N - International Rectifier PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.117Ω G S Description Fifth Generation HEXFETs from International Rectifier utilize |