Semiconductor Informations

File Download: FCPF11N60F.PDF
| FCPF11N60F Fairchild Semiconductor - 600V N-Channel MOSFET FCP11N60F, FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F, FCPF11N60F 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 0.32Ω Fast Recovery Type ( trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET |
| FCP104N60 MOSFET ( Transistor ) - Fairchild Semiconductor FCP104N60 N-Channel SuperFET® II MOSFET FCP104N60 N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ June 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 96 mΩ Ultra Low Gate Charge (Typ. Qg = 63 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) 100% Avalanche Tested RoHS |
| FCP104N60F N-Channel SuperFET ll FRFET MOSFET - Fairchild Semiconductor FCP104N60F N-Channel SuperFET® II FRFET® MOSFET FCP104N60F N-Channel SuperFET® ll FRFET® MOSFET 600 V, 37 A, 104 mΩ December 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 91 mΩ Ultra Low Gate Charge (Typ. Qg = 110 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 313 pF) 100% |