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FCPF7N60 Fairchild Semiconductor - 600V N-Channel MOSFET

FCP7N60 , FCPF7N60 600V N-Channel MOSFET SuperFET FCP7N60 , FCPF7N60 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 0.53Ω Ultra low gate charge (typ. Qg = 25nC) Low effective output capacitance (typ. Coss.eff = 60pF) 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced

FCPF7N60NT Fairchild Semiconductor - MOSFET ( Transistor )

FCPF7N60NT N-Channel SupreMOS® MOSFET FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω Features Typ RDS(on) = 460mΩ Ultra Low Gate Charge (typ. Qg = 17.8 nC) Low Effective Output Capacitance (typ. Coss(eff.) = 91 pF) 100% Avalanche Tested RoHS Compliant Application Solar Inverter AC-DC Power Supply December 2013 Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next gen

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FCP104N60 MOSFET ( Transistor ) - Fairchild Semiconductor

FCP104N60 N-Channel SuperFET® II MOSFET FCP104N60 N-Channel SuperFET® II MOSFET 600 V, 37 A, 104 mΩ June 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 96 mΩ Ultra Low Gate Charge (Typ. Qg = 63 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) 100% Avalanche Tested RoHS

FCP104N60F N-Channel SuperFET ll FRFET MOSFET - Fairchild Semiconductor

FCP104N60F N-Channel SuperFET® II FRFET® MOSFET FCP104N60F N-Channel SuperFET® ll FRFET® MOSFET 600 V, 37 A, 104 mΩ December 2014 Features 650 V @ TJ = 150°C Typ. RDS(on) = 91 mΩ Ultra Low Gate Charge (Typ. Qg = 110 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 313 pF) 100%

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