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File Download: FDG6306P.PDF
[ Descriptions ]
| FDG6306P Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V 12V). Features 0.6 A, 20 V. Low gate charge High performance trenc |
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