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FDG6306P Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET

FDG6306P February 2001 FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V 12V). Features 0.6 A, 20 V. Low gate charge High performance trenc

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FDG1024NZ N-Channel MOSFET - Fairchild Semiconductor

FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A Max rDS(

FDG122032A Monochrome Lcd Module - Fiducia

w w a D . w S a t e e h U 4 t m o .c PRODUCT SPECIFICATION Approval for Specification only Approval for Pre-production U MONOCHROME LCD MODULE 4 t e PART NUMBER : FDG122 032A e h S DESCRIPTION : 32x122Graphic a t a REVISION : Rev A D . w w w Approval for Sample Only .c m o x Approval fo

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