Semiconductor Informations
| FDH300 Fairchild Semiconductor - High Conductance Low Leakage Diodes |
| FDH300 New Jersey Semiconductor - Diode 125V 0.2A 2-Pin DO-35 T/R |
| FDH038AN08A1 N-Channel PowerTrench MOSFET - Fairchild Semiconductor FDH038AN08A1 February 2003 FDH038AN08A1 N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ Features r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A Qg(tot) = 125nC (Typ.), VGS = 10V Internal Gate Resistor, Rg = 20Ω (Typ.) Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and |
| FDH047AN08A0 N-Channel PowerTrench MOSFET 75V/ 80A/ 4.7m - Fairchild Semiconductor FDP047AN08A0 , FDI047AN08A0 , FDH047AN08A0 June 2004 FDP047AN08A0 , FDI047AN08A0 , FDH047AN08A0 N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ Features rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A Qg(tot) = 92nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Sin |