Semiconductor Informations
| FDMC8884 Fairchild - N-Channel Power Trench MOSFET FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semicondu |
| FDM-2B FDM-2B - ETC w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
| FDM100-0045SP Buck Chopper - IXYS Corporation FDM 100-0045SP Buck Chopper with Trench Power MOSFET and Schottky Diode in ISOPLUS i4-PACTM Preliminary data 3 5 4 ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 mΩ 1 2 5 MOSFET Symbol VDSS VGS ID25 ID90 TC = 25°C TC = 90°C Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 100 80 V V A A |