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FDN302P Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Features 20 V, 2.4 A. RDS(ON) = 0.055 Ω @ VGS = 4.5 V RDS(ON) = 0.080 Ω @ VG

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FDN302 P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltag

FDN302P P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltag

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