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FDN308P

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.5A, 125mΩ

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[ Descriptions ]

FDN308P Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrench MOSFET

FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V). Features 20 V, 1.5 A. RDS(ON) = 125 mΩ @ VGS = 4.5 V RDS(ON) = 190 mΩ @ VGS

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