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FDN339AN Fairchild Semiconductor - N-Channel 2.5V Specified PowerTrench MOSFET

FDN339AN November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.

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FDN302 P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltag
FDN302P P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltag

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FDN339AN - MOSFET – N-Channel POWERTRENCH®
IDSS. Zero Gate Voltage Drain Current. VDS = 16 V, VGS = 0 V. -. -. 1. A. IGSSF. Gate-Body Leakage Current, Forward. VGS = 8 V, VDS = 0 V.
FDN339AN
Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting.
Product Bulletin
Jan 31, 2022 ... FDN339AN. FDN340P. FDN342P. FDN352AP. FDN357N. FDN358P. FDN359AN. FDN359BN. FDN360P. FDN361BN. FDN537N. FDN5618P. FDN5630. FDN5632N-F085.
FDN339AN N-Channel 2.5V Specified PowerTrench® MOSFET
This literature is subject to all applicable copyright laws and is not for resale in any manner. Page 2. FDN339AN. FDN339AN Rev. C. FDN339AN. N-Channel 2.5V ...
Fairchild Semiconductor Product Catalog 2004 - Discrete Power
... FDN339AN. 20. Single. –. 0.035. 0.05. –. 7. 3. 0.5. FDN371N. 20. Single. –. 0.05. 0.06. –. 7.6. 2.5. 0.5. FDN327N. 20. Single. –. 0.07. 0.08. 0.12. 4.5. 2. 0.5.
bq3050EVM SBS 1.1 Compliant Advanced Gas Gauge Battery ...
FDN339AN. MOSFET, N-ch, 20-V, SOT23. FDN339AN. Fairchild. 3 A, 0.05 Ω. 2. Q2, Q3. Si7114DN. MOSFET, Fast. PWRPAK 1212. Si7114DN-T1-E3 Vishay. Switching, NChan, ...
bq30z554EVM SBS 1.1 Impedance Track Enabled Battery ...
FDN339AN. MOSFET, N-ch, 20-V, 3A, 0.05-Ohms. SOT23. FDN339AN. Fairchild. 8. bq30z554EVM SBS 1.1 Impedance Track™ Enabled Battery Management. SLUUA36–November ...
bq28400 EVM-001 SBS 1.1 Compliant
FDN339AN. MOSFET, N-ch,. SOT23. FDN339AN. Fairchild. 20-V, 3A,. 0.05-Ohms. 2. Q2, Q3. Si7409ADN. MOSFET, Fast. PWRPAK 1212. Si7409ADN. Vishay. Switching, PChan,.
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FDN337N, FDN339AN,. FDN357N, FDN359AN,. FDN361AN,FDV303N. SI2302, TN0200T, SI2304, SI2306. NDS331N, NDS335N,. NDS351AN, NDS355AN,. FDN337N, FDN339AN,. FDN357N ...
bq30z55-R1EVM SBS 1.1 Impedance Track™ Enabled Battery ...
FDN339AN. MOSFET, N-ch, 20-V, 3 A, 0.05 Ω. SOT23. FDN339AN. Fairchild. 2. Q2, Q3. Si7114DN. MOSFET, Fast Switching, NChan, 30. PWRPAK 1212. Si7114DN-T1-E3.
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