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File Download: FDN339AN.PDF
[ Descriptions ]
| FDN339AN Fairchild Semiconductor - N-Channel 2.5V Specified PowerTrench MOSFET FDN339AN November 1999 FDN339AN N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4. |
Related Information
| FDN302 P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltag |
| FDN302P P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltag |
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