Semiconductor Informations

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| FF900R12IP4 Infineon - IGBT Module TechnischeInformation, TechnicalInformation IGBT-Module IGBT-modules FF900R12IP4 PrimePACK™2ModulmitTrench, FeldstoppIGBT4undEmitterControlled4DiodeundNTC PrimePACK™2modulewithTrench, FieldstopIGBT4andEmitterControlled4diodeandNTC Vorl ufigeDaten, PreliminaryData VCES = 1200V IC nom = 900A , ICRM = 1800A TypischeAnwendungen Hilfsumrichter Hochleistungsumrichter Motorantriebe Traktionsu |
| FF900R12IP4D Infineon - IGBT Module Technische Information , technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK™2 Modul mit Trench, Feldstopp IGBT4, gr ßerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench, Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC " # $ % & "'() * + ,' -., * 2 " & ,'01 * + 5 2 8 9 3 3 7 " $ 4 $ 3 $ 3 2 5 $3 6 4 % % 2 86 9 2 ; : |
| FF900R12IE4 IGBT Module - Infineon Technische Information , technical information IGBT-Module IGBT-modules FF900R12IE4 PrimePACK™2 Modul mit Trench, Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench, Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC " # $ % & "'() * +' ,-. * 1 " & +' |
| FF900R12IP4 IGBT Module - Infineon TechnischeInformation, TechnicalInformation IGBT-Module IGBT-modules FF900R12IP4 PrimePACK™2ModulmitTrench, FeldstoppIGBT4undEmitterControlled4DiodeundNTC PrimePACK™2modulewithTrench, FieldstopIGBT4andEmitterControlled4diodeandNTC Vorl ufigeDaten, PreliminaryData VCES = 1200V IC nom = 900A , |