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FQA11N90-F109
N-Channel Power MOSFET, QFET®, 900V, 11.4A, 960mΩ, TO-3P
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Weyland Electronics Group Pte. Ltd.15,0002.99Visit Site
Worldway Electronics23,2523.76733.5879Visit Site
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Maritex2676.03545.24693.7669Visit Site
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[ Descriptions ]


FQA11N90 Fairchild Semiconductor - 900V N-Channel MOSFET

FQA11N90 September 2000 QFET FQA11N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche
FQA11N90C Fairchild Semiconductor - 900V N-Channel MOSFET

FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv, dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar str


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FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state r
FQA10N80C 800V N-Channel MOSFET - Fairchild Semiconductor

FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv, dt capability ® Description These N-Channel enha




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