Semiconductor Informations
| FQB8N60C Fairchild Semiconductor - 600V N-Channel MOSFET FQB8N60C , FQI8N60C QFET FQB8N60C , FQI8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the av |
| FQB8N60CF Fairchild Semiconductor - N-Channel MOSFET FQB8N60CF 600V N-Channel MOSFET December 2005 FRFET FQB8N60CF 600V N-Channel MOSFET Features 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V Low gate charge ( typical 28nC) Low Crss ( typical 12pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar s |
| FQB10N20 200V N-Channel MOSFET - Fairchild Semiconductor ! " # ! ! ! $ ! % ! QFET & & & & & & '(%)((*+,( -.Ω, *,'(* 0 1 '- 2 3 01 '-3 '((4 ! 5 !!$ " ! " ! ! " " " |
| FQB10N20C 200V N-Channel MOSFET - Fairchild Semiconductor FQB10N20C, FQI10N20C QFET FQB10N20C, FQI10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on |