Semiconductor Informations

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| FQPF8N60C Fairchild Semiconductor - 600V N-Channel MOSFET FQP8N60C, FQPF8N60C QFET FQP8N60C, FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the aval |
| FQPF8N60CF Fairchild Semiconductor - 600V N-Channel MOSFET FQPF8N60CF 600V N-Channel MOSFET February 2006 FRFET FQPF8N60CF 600V N-Channel MOSFET Features 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pla |
| FQP10N20 200V N-Channel MOSFET - Fairchild Semiconductor QFET & & & & & & '(%)((*+,( -.Ω, *,'(* 0 1 '- 2 3 01 '-3 '((4 ! 5 !!$ " ! " # ! ! ! $ ! % ! ! " ! ! " " " ! |
| FQP10N20 200V N-Channel MOSFET - Fairchild Semiconductor QFET & & & & & & '(%)((*+,( -.Ω, *,'(* 0 1 '- 2 3 01 '-3 '((4 ! 5 !!$ " ! " # ! ! ! $ ! % ! ! " ! ! " " " ! |