Semiconductor Informations

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| FS8205A Fortune Semiconductor - Dual N-Channel Enhancement Mode Power MOSFET REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrFoepOnecRrteTieUOsnNlEy' Fortune Semiconductor Corporation 富晶電子股 有限公司 23F, No. 29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 www.ic-fortune.com This manual cont |
| FS8205A CanSheng Industry - Dual N-Channel Enhancement Mode MOSFET ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancement Mode MOSFET Features - 20V, 6A, RDS(ON)<25mΩ @ VGS=4.5V RDS(ON) <34mΩ @ VGS=2.5V - Super High Dense Cell Design - Reliable and Rugged - Lead Free Available (RoHS Compliant) Pin Description Top View D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 TSSOP-8 Applications - Portable Equipment and Battery |
| FS800R07A2E3 IGBT-Module - Infineon TechnischeInformation, TechnicalInformation IGBT-Modul IGBT-Module FS800R07A2E3 HybridPACK™2ModulmitTrench, FeldstoppIGBT3undEmitterControlled3DiodeundNTC HybridPACK™2modulewithTrench, FieldstopIGBT3andEmitterControlled3diodeandNTC VCES = 650V IC nom = 800A , ICRM = 1600A T T T TypischeAn |
| FS8107E Low Power Phase-Locked Loop IC - Himark FS8107E Low Power Phase-Locked Loop IC the wireless IC company HiMARK Technology, Inc. reserves the right to change the product described in this datasheet. All information contained in this datasheet is subject to change without prior notice. HiMARK Technology, Inc. assumes no responsibility for |