Semiconductor Informations

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| G30N60 ETC - HGTG30N60 HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC |
| G30N60C3D Intersil Corporation - HGTG30N60C3D HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state volt |
| G30 Voltage-Controlled Attenuator Module - Tyco Electronics %& &' ( )*( +, . , 0 1 2 34 5 - . , 0 1 2 34 5 *( ,* 63+%7( ) 8%+,9 : 0 7*;2 34 5 <0' &' 8 2 34 5 " , !$ "= > !, " " $ "! !$ $ ! # $ # ! " " > = " ! $ " #! # @ ! ! ! !$ ! # ! > >! A $ ! = ! : " 0B ! &$ 7 $! # C " = ! 7( ! , , &7, ), D D " !! D D ; @ ! ! &$ 0B 7 $! ; |
| G3000TF250 Anode Shorted Gate Turn-Off Thyristor - IXYS Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Maximum continuos DC-link voltage R |