Semiconductor Informations
G30N60HS Infineon - High Speed IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution PG-TO-220-3-1 High ruggedness, temperature stable behaviour |
G30N60HS High Speed IGBT - Infineon SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperatur |
G30T60 IGW30N60T - Infineon IGW30N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5 s Designed for : - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP™ and Fiel |
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