Semiconductor Informations
| G30N60HS Infineon - High Speed IGBT SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution PG-TO-220-3-1 High ruggedness, temperature stable behaviour |
| G30 Voltage-Controlled Attenuator Module - Tyco Electronics %& &' ( )*( +, . , 0 1 2 34 5 - . , 0 1 2 34 5 *( ,* 63+%7( ) 8%+,9 : 0 7*;2 34 5 <0' &' 8 2 34 5 " , !$ "= > !, " " $ "! !$ $ ! # $ # ! " " > = " ! $ " #! # @ ! ! ! !$ ! # ! > >! A $ ! = ! : " 0B ! &$ 7 $! # C " = ! 7( |
| G3000TF250 Anode Shorted Gate Turn-Off Thyristor - IXYS Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Maximum continuos DC-link voltage R |